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| NTE2402 (NPN) & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT-23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These transistors feature low intermodulation distortion and high power gain. Due to very high transition frequency, these devices also have excellent wideband properties and low noise up to high frequencies. Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Total Power Dissipation (TA +60C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Collector Cutoff Current DC Current Gain Transition Frequency Collector Capacitance Emitter Capacitance Feedback Capacitance Symbol ICBO hFE fT Cc Ce Cre Test Conditions VCB = 10V, IE = 0 VCE = 10V, IC = 14mA VCE = 10V, IC = 14mA, f = 500MHz VCB = 10V, IE = Ie = 0, f = 1MHz VEB = 0.5V, IC = Ic = 0, f = 1MHz VCE = 10V, IC = 2mA, f = 1MHz, TA = +25C Min - 25 - - - - Typ - 50 5 0.75 0.8 0.4 Max 50 - - - - - GHz pF pF pF Unit nA Electrical Characteristics (Cont'd): (TJ = +25C unless otherwise specified) Parameter Noise Figure (At Optimum Source Impedance) Max. Unilateral Power Gain (sre Assumed to be Zero) Output Voltage (At dim = -60dB) Symbol F GUM VO Test Conditions VCE = 10V, IC = 2mA, f = 500MHz, TA = +25C VCE = 10V, IC = 2mA, f = 500MHz, TA = +25C, Note 2 VCE = 10V, IC = 14mA, RL = 75, TA = +25C, f(p+q-r) = 493,25MHz Min - - - Typ 2.4 18 150 Max - - - Unit dB dB mV Note 2. GUM = 10 log |sfe|2 / [1 - |sie|2] [1 - |soe|2]. .016 (0.48) C B E .098 (2.5) Max .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2) |
Price & Availability of NTE2403
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